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Modeling of AlGaN/GaN High Electron Mobility Transistors

By: Contributor(s): Material type: Computer fileComputer fileSeries: Springer Tracts in Electrical and Electronics EngineeringPublication details: Springer Nature Singapore; 2025Edition: 2025ISBN:
  • 9789819775064
Subject(s): Online resources:
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Item type Home library Status Barcode
E-BOOKS E-BOOKS EBOOKS-SPRINGER Not for loan EBK35339

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