000			00593nam a2200205Ia 4500
001			25265
005			20250221152339.0
008			250214s9999||||xx |||||||||||||| ||und||
020			_a471580058
100			_aGhandhi, Sorab, K
245		0	_aVLSI fabrication principles : silicon and gallium arsenide
250			_a2
260			_aSingapore
260			_bJohn Wiley
260			_c1994
300			_axxiv, 834p.
500			_aIncludes bibliographical references and index
650			_aIntegrated circuits-Very large scale integration(VLSI) -- Silicon --Galluim arsenide
942			_cBK
999			_c41180 _d41180