000			00650nmm a2200217Ia 4500
001			EBK35339
005			20260107144701.0
008			260107s9999||||xx |||||||||||||||||und||
020			_a9789819775064
100			_aD. Nirmal
245		0	_aModeling of AlGaN/GaN High Electron Mobility Transistors
250			_a2025
260			_bSpringer Nature Singapore
260			_c2025
490			_aSpringer Tracts in Electrical and Electronics Engineering
650			_aEngineering
700			_aJ. Ajayan
856			_3Click here to access online
856			_uhttps://link.springer.com/openurl?genre=book&isbn=978-981-97-7506-4
942			_cEBK
999			_c455573 _d455573