000 | 00835nam a2200289Ia 4500 | ||
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001 | 33103 | ||
005 | 20250221153200.0 | ||
008 | 250214s9999||||xx |||||||||||||| ||und|| | ||
020 | _a8124205205 | ||
100 | _aBrillson, Leonard, J, ed. | ||
245 | 0 | _aContacts to semiconductors : fundamentals and technology | |
260 | _aNew Delhi | ||
260 | _bCrest Publishing | ||
260 | _c2005 | ||
300 | _axxii, 680p. | ||
500 | _aIncludes bibliographical references and index | ||
650 | _a( | ||
650 | _aMetal semiconductor structures | ||
650 | _aMetallurgical methods -- Ohmic contacts | ||
650 | _aMos | ||
650 | _aScanning tunnelling Microscopy ( | ||
650 | _aSemiconductor devices | ||
650 | _aSoft X-Ray photoemission spectroscopy | ||
650 | _aSxps) | ||
650 | _aUltrahigh vacuum techniques | ||
942 | _cBK | ||
999 |
_c48919 _d48919 |