000			00673nam a2200229Ia 4500
001			36177
005			20250221153917.0
008			250214s9999||||xx |||||||||||||| ||und||
020			_a849335590
100			_aCressler, John D, Ed.
245		0	_aSilicon heterostructure handbook : materials, fabrication, devices, circuits and applications of SiGe and Si strained-layer epitaxy
260			_aBoca Raton
260			_bCRC Press
260			_c2006
300			_axix, 1227p. ;
500			_aIncludes index.
650			_adevice physics
650			_aFabrication
650			_aSilicon hetrostructure -- Handbook
650			_aTransistor optimization
942			_cBK
999			_c51977 _d51977