000 | 00841nam a2200301Ia 4500 | ||
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001 | 42468 | ||
005 | 20250221154634.0 | ||
008 | 250214s9999||||xx |||||||||||||| ||und|| | ||
020 | _a71241523 | ||
100 | _aAnderson, Betty Lise | ||
245 | 0 | _aFundamentals of semiconductor devices | |
260 | _aNew Delhi | ||
260 | _bTata McGraw-Hill | ||
260 | _c2005 | ||
300 | _axv, 800p. | ||
500 | _aIncludes bibliographical references and index | ||
650 | _aBipolar devices | ||
650 | _aBipolar junction devices | ||
650 | _aDiodes | ||
650 | _aElectronics engineering | ||
650 | _aField effect transistors | ||
650 | _aMetal oxide semiconductor field effect transistor (MOSFET) | ||
650 | _aQuantum mechanics | ||
650 | _aSemiconductors | ||
650 | _aTransistros | ||
700 | _aAnderson, Richard L | ||
942 | _cBK | ||
999 |
_c58259 _d58259 |